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PHYSICS 2nd Year MCQs Chapter No.7 ELECTRONICS Test No.2

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PHYSICS – 2nd Year
Chapter Name : PHYSICS OF SOLIDS
Chapter No. 7  [ Test No.2 ]
Multiple Choice Questions
Note : All MCQ’s selected in this test are from OLD F.Sc. board , UHS and PMC(Pakistan Medical Commission) Islamabad Papers.

 








Book Name :  PHYSICS
Chapter No. 7 ( Test No. 2 )
Chapter Name : ELECTRONICS 
Total MCQ from Text Book :  107
Book Version  :
2022

Published By : Punjab Text Book Board Lahore
Approved By : Govt of the Punjab and Federal Ministry for Education
Test Type : MCQ’s
Exam conduct By : Inter Boards of Sindh, KPK, Balochistan, AJK, Gilgit Baltistan, Punjab & Federal
Class / Grade  : 12 ( F.Sc. Intermediate)
Total Marks : 107
Total Time :   107 minutes




1

GRADE 12 - PHYSICS CHAPTER NO.7 ELECTRONICS Test No. 2

GRADE 12 - PHYSICS CHAPTER NO.7 ELECTRONICS Test No. 2

1 / 107

In a common-base amplifier the phase difference between input signal voltage and output voltage is:

2 / 107

The PN junction diode acts as

3 / 107

x = ∁A+B is the mathematical notation for (SGD 2016 Group II)

4 / 107

Minimum number of semiconductor diodes required for full wave rectification are: (Fsd 2015)

5 / 107

51. Open loop gain of OP - Amp is of the order of (D.G.Khan 2015 Group I)

6 / 107

The potential barrier for germanium at room temperature is (Mir 2015)

7 / 107

The level sensor works on the absis of:

8 / 107

37. In p-type substances, the minority carries are:

9 / 107

The base of transistor is made thin and is very lightly doped so that

10 / 107

SI unit of current gain is: (Grw 2016)

11 / 107

The resistance of reverse biased PN junction diode is about

12 / 107

The barrier potential of Silicon Diode at room temperature is: (Bwp 2015)

13 / 107

The matheintical notation for NOT operation is:

14 / 107

On increasing the reverse bias voltage to a large value in a PN junction diode, The current

15 / 107

50. Reverse current flows due to (D.G.Khan 2015 Group I)

16 / 107

The colour of light emitted by a LED depends on (SWL 2016)

17 / 107

Energy band in solids are a consequence of

18 / 107

Truth Table of Logic Function: (BWP 2016)

19 / 107

The gain of non-inverting amplification factor 13 is given by: (RWP 2015)

20 / 107

Which amplifier has input impedence low and output impedence high?

21 / 107

The thickness of base in a transistor is of the order of: ( LHR 2015 Group I)

22 / 107

For rectification we use (D.G.Khan 2015 Group II)

23 / 107

In the depletion region of an unbiased PN junction diode there are

24 / 107

52. The potential barrier for silicon at room temperature is (D.G.Khan 2015 Group II)

25 / 107

Potential difference across two terminal of silicon diode at 300 k is: ( LHR 2015 Group I)

26 / 107

What is the voltage gain in a common emitter amplifier, where input resistance is 3Ω and load resistance 24Ω, β = .6?

27 / 107

49. The use of LDR is in the circuit of: (SwI 2015)

28 / 107

The electrical circuit which is used to get smooth DC output from a rectifier circuit is called:

29 / 107

The part of transistor, which is heavily doped to produce a large number of majority carriers:

30 / 107

42. In forward biasing, the value of resistance is (Sgd 2015 Group I)

31 / 107

The output of two input OR gate is zero only when its; (Mirpur 2016)

32 / 107

The potential barriers for silicon at room temperature is (D.G khan 2016 Group I)

33 / 107

The magnitude of open loop gain at room temperature is: (D.G khan 2016 Group I)

34 / 107

Exclusive NOR gate (XNOR) can be obtained by inverting the output of:

35 / 107

43. Current gain β of a transistor is (Sgd 2015 Group I)

36 / 107

If Ic = 4mA and β = 95 then IE is

37 / 107

A device which converts some physical quantity into voltage is called:

38 / 107

If the forward voltage in a diode is increased the width of depletion region

39 / 107

A PN-junction can not be used as: (Lhr 2016 Group II)

40 / 107

The least doped region in a transistor is:

41 / 107

Which amplifier is called current amplifier?

42 / 107

The P.side of a junction diode is eathed and N-side is given a potential of -2V. The diode will

43 / 107

The output of exclusive NOR gate (XNOR) is 0, when:

44 / 107

41. The ratio β transistor is called: (Mtn 2015 Group II)

45 / 107

48. The width of central region of a transistor is: (SwI 2015)

46 / 107

During negative half cycle of A.C then p-n Junction offers (Mirpur 2015)

47 / 107

The thickness of the base of the transistor is of the order of: (MTN 2016 Group I)

48 / 107

A diode characteristic, curve is plotted between (Lhr 2016 Group I)

49 / 107

Depletion region carries (D.G khan 2016 Group II)

50 / 107

In photovoltaic cell, current is directly proportional to: (GRW 2015)

51 / 107

The ratio of potential barrier charge to Si at room temperature is: (Lhr 2016 Group II)

52 / 107

A diode as rectifier converts

53 / 107

The mathematically notation for exclusive NOR operation is:

54 / 107

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P.N junction are:

55 / 107

Minority carries present in a p-type semiconductor are due to

56 / 107

PN junction diode at low voltage work as insulator if connected

57 / 107

In a common-base transistor circuit, the current gain is 0.98. On changing the emitter current by 5mA, the changein collector current is:

58 / 107

Transistors are made from: (Lhr 2016 Group I)

59 / 107

The current gain 'β' of a transistor is given by; (Mirpur 2016)

60 / 107

Identify the sensors among the following:

61 / 107

Three semiconductors are arranged in the increasing order of their energy gap as follows. The correct arragement is:

62 / 107

In full wave rectification no of diodes required are equal to (SGD 2016 Group I)

63 / 107

The common emitter current amplification factor β is given by: (RWP 2015)

64 / 107

The energy gap in silicon is

65 / 107

44. The gain of non inverting op.Amp of external resistances k1 = 10kΩ , R2 = 100kΩ (Sgd 2015 Group II)

66 / 107

45. Which one can be used as temperature sensor in electric circuit? (Sgd 2015 Group II)

67 / 107

6. For rectification we use: (Grw 2016)

68 / 107

The open loop gain of the amplifier is order of: ( LHR 2015 Group I)

69 / 107

The mathematical notation for OR operation is.:

70 / 107

The mathematical notation for exclusive OR operation is:

71 / 107

The potential bairiers for germanium at room temperature is:

72 / 107

Light emitting diodes (LED) are made from semi-conductors: ( LHR 2015 Group I)

73 / 107

Automatic functioning of streetlight can be done by the use of: (MTN 2016 Group II)

74 / 107

38. Potential difference across depletion region in case of Silicon: (Mtn 2015 Group I)

75 / 107

A two inputs NAND gate with inputs A and B has an output 0, if (BWP 2016)

76 / 107

The mathematical notation for NOR operation is:

77 / 107

A logic gate which inverts the input is called

78 / 107

The thickness of depletion region in a PN junction diode is of the order of

79 / 107

Truth table of logic function:

80 / 107

The mathematical notation for AND operation

81 / 107

47. The gain of Amplifier is given as: (Bwp 2015)

82 / 107

The potential barrier for germanium at room temperature is (SWL 2016)

83 / 107

Transistor are useful in equipments such as hearing acids and small radio receivers because transistor

84 / 107

Exclusive NOR gate (XNOR gate) can be obtained by combining the:

85 / 107

The input resistance of an op-amplifier is: (FSD 2016)

86 / 107

The mathematical notation for NAND operation is:

87 / 107

NPN transistor is preferred to PNP transistor because they are

88 / 107

8. Electrons vibrating 94.000 times each second will produce radio waves of (RWP 2016)

89 / 107

In the middle of the depletion layer of a reverse biased PN junction the

90 / 107

In a semiconductor crystal, if current flows due to breakage of crystal bonds, then semiconductor is called

91 / 107

The output of exclusive OR gate (XOR) is 1, when:

92 / 107

In PN Junction, the barrier potential offers opposition to only

93 / 107

NAND gate is used to invert the output of:

94 / 107

Which of the following is the forbidden energy gap in joules for germanium crystal?

95 / 107

Which Of the following is not accurate measuring device? (RWP 2016)

96 / 107

Output resistance of an op-amp is (SGD 2016 Group I)

97 / 107

39. The size of base in a transistor is: (Mtn 2015 Group I)

98 / 107

10. The open loop gain of amplifier is of the order of (RWP 2016)

99 / 107

Atransistor is made of

100 / 107

9. The gain of transistor amplifier depends upon: (RWP 2016)

101 / 107

Which amplifier gives a phase shift of 180°ree; between input and output signal?

102 / 107

The Boolean expressi9n of NAND Gate is: (MTN 2016 Group II)

103 / 107

The reverse biasing in a PN junction diode

104 / 107

In an NPN transistor circuit, the collector current is 10mA. If 90% of the electrons emitted reach the collector:

105 / 107

A logic gate gives high output when any one of its inputs is high. Which of the following is the logic gate

106 / 107

40. Greater concentration of impurity is added in: (Mtn 2015 Group II)

107 / 107

Exclusive OR gate (XOR gate) can be obtained by combining the:

Your score is

The average score is 24%

0%



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